有报告指现今大部分研究都在开发一种以半导体（氮化镓或合金铝氮化镓）为基础且运行於紫外线的发光二极管，而光的波长为250纳米。在2006年5月有报告指一个无效率的二极管可发出波长为210纳米的光波。以真空紫外线反射率量出单一的氮化铝晶体上有6.2eV的 能隙。理论上，能隙允许一些波长为大约200纳米的波通过。但在商业上实行时，需克服不少困难。氮化铝应用於光电工程，包括在光学储存介面及电子基质作诱电层，在高的导热性下作晶片载体，以及作军事用途。
It has been reported that most of the current research is developing a semiconductor (gallium nitride or aluminum alloy gallium nitride) based light emitting diodes operating in ultraviolet light, and the wavelength of light is 250 nm. In May 2006, it was reported that an inefficient diode can emit light waves with a wavelength of 210 nm. The energy gap of 6.2 EV on a single AlN crystal was measured by vacuum ultraviolet reflectance. Theoretically, the energy gap allows some waves with a wavelength of about 200 nanometers to pass through. However, many difficulties need to be overcome in commercial practice. AlN has been used in optoelectronic engineering, including the use of optical storage interfaces and electronic substrates as an inducer, as a wafer carrier with high thermal conductivity, and for military applications.
由于氮化铝压电效应的特性，氮化铝晶体的外延性伸展也用於表面 声学波的探测器。而探测器则会放置於矽 晶圆上。只有非常少的地方能可靠地制造这些细的薄膜。
Due to the characteristics of AlN piezoelectric effect, the epitaxial extension of AlN crystal is also used in surface acoustic wave detector. The detector is placed on a silicon wafer. There are very few places where these thin films can be reliably made.