化学气相沉积法是将铝粉的挥发性化合物（包括卤化铝、烷基铝）在氮气氛围下发生化学反应，从气相中沉淀出氮化铝粉末。化学气相沉积法的铝源可以采用卤化铝，也可以采用烷基铝。这种方法利用了反应物自身能够在蒸馏和升华中得到净化，因此制得的AlN纯度足够高。但是卤化铝的引入，在反应过程中会产生HCl副产物，对设备有腐蚀作用，烷基铝的引入，虽避免了HCl的产生，但成本显著提高，不利于大规模生产。
Chemical vapor deposition (CVD) is the chemical reaction of aluminum powder volatile compounds (including aluminum halide and aluminum alkylate) in nitrogen atmosphere to precipitate aluminum nitride powder from the gas phase. The aluminum source of CVD can be aluminum halide or alkyl aluminum. In this method, the reactant itself can be purified in distillation and Shenghua, so the purity of AlN is high enough. However, the introduction of aluminum halide will produce HCl by-products in the reaction process, which will corrode the equipment. Although the introduction of alkyl aluminum avoids the production of HCl, the cost is significantly increased, which is not conducive to large-scale production.