性质
Nature
AlN最高可稳定到2200℃。室温强度高，且强度随温度的升高下降较慢。导热性好，热膨胀系数小，是良好的耐热冲击材料。抗熔融金属侵蚀的能力强，是熔铸纯铁、铝或铝合金理想的坩埚材料。氮化铝还是电绝缘体，介电性能良好，用作电器元件也很有希望。
AlN can be stabilized up to 2200 C. The strength at room temperature is high, and the strength decreases slowly with the increase of temperature. It has good thermal conductivity and small coefficient of thermal expansion, and is a good heat shock resistant material. It is an ideal crucible material for melting and casting pure iron, aluminium or aluminium alloy. Aluminum nitride is also an electrical insulator with good dielectric properties. It is also promising to be used as an electrical component.
砷化镓表面的氮化铝涂层，能保护它在退火时免受离子的注入。氮化铝还是由六方氮化硼转变为立方氮化硼的催化剂。室温下与水缓慢反应.可由铝粉在氨或氮气氛中800~1000℃合成，产物为白色到灰蓝色粉末。或由Al2O3-C-N2体系在1600~1750℃反应合成，产物为灰白色粉末。或氯化铝与氨经气相反应制得.涂层可由AlCl3-NH3体系通过气相沉积法合成
Aluminum nitride coating on GaAs surface can protect it from ion implantation during annealing. Aluminum nitride is also a catalyst for the conversion of hexagonal boron nitride to cubic boron nitride. It can be synthesized by aluminium powder in ammonia or nitrogen atmospheres at 800-1000 C. The product is white to gray-blue powder. Or synthesized by reaction of Al2O3-C-N2 system at 1600-1750 ~C, the product is gray-white powder. Or aluminium chloride and ammonia are prepared by gas phase reaction. Coatings can be synthesized by vapor deposition of AlCl3-NH3 system.