有报告指现今大部分研究都在开发一种以半导体（氮化镓或合金铝氮化镓）为基础且运行於紫外线的发光二极管，而光的波长为250纳米。在2006年5月有报告指一个无效率的二极管可发出波长为210纳米的光波[1]。以真空紫外线反射率量出单一的氮化铝晶体上有6.2eV的能隙。
It has been reported that most of the current research is in the development of a semiconductor (GaN or Al-GaN alloy) based photodiode operating in ultraviolet light, and the wavelength of light is 250 nanometers. In May 2006, it was reported that an inefficient diode could emit a wavelength of 210 nanometers [1]. The energy gap of 6.2eV on a single AlN crystal is measured by the vacuum ultraviolet reflectance.
理论上，能隙允许一些波长为大约200纳米的波通过。但在商业上实行时，需克服不少困难。氮化铝应用於光电工程，包括在光学储存介面及电子基质作诱电层，在高的导热性下作晶片载体，以及作军事用途。
In theory, the energy gap allows some waves with a wavelength of about 200 nanometers to pass through. However, many difficulties need to be overcome when it is implemented commercially. Aluminum nitride is used in optoelectronic engineering, including optical storage interfaces and electronic substrates as inducers, wafer carriers with high thermal conductivity, and military applications.